VLSI Fabrication Principles ; Silicon..Arsenide (Record no. 33021)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 04536nam a22001817a 4500 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | OSt |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9788126517909 |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Ghandhi, Sorab K |
| 245 ## - TITLE STATEMENT | |
| Title | VLSI Fabrication Principles ; Silicon..Arsenide |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 2nd |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) | |
| Place of publication, distribution, etc | New Delhi |
| Name of publisher, distributor, etc | Wiley India |
| Date of publication, distribution, etc | 1994 |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 834p. |
| 500 ## - GENERAL NOTE | |
| General note | 1 Material Properties 1<br/><br/>1.1 Physical Properties 3<br/><br/>1.2 Crystal Structure 13<br/><br/>1.3 Crystal Axes and Planes 16<br/><br/>1.4 Orientation Effects 19<br/><br/>1.5 Point Defects 23<br/><br/>1.6 Dislocations 45<br/><br/>1.7 Electronic Properties of Defects 53<br/><br/>Tables 58<br/><br/>References 64<br/><br/>Problems 67<br/><br/>2 Phase Diagrams and Solid Solubility 69<br/><br/>2.1 Unitary Diagrams 70<br/><br/>2.2 Binary Diagrams 70<br/><br/>2.3 Solid Solubility 88<br/><br/>2.4 Ternary Diagram 91<br/><br/>References 99<br/><br/>Problem 100<br/><br/>3 Crystal Growth and Doping 102<br/><br/>3.1 Starting Growth and Doping 102<br/><br/>3.2 Growth from the Melt 106<br/><br/>3.3 Considerations for Proper Crystal Growth 113<br/><br/>3.4 Doping in the Melt 120<br/><br/>3.5 Semi-Insulating Gallium Arsenide 129<br/><br/>3.6 Properties of Melt-Grown Crystals 132<br/><br/>3.7 Solution Growth 134<br/><br/>3.8 Zone Processes 135<br/><br/>3.9 Properties of Zone-Processed Crystals 141<br/><br/>Tables 142<br/><br/>References 145<br/><br/>Problems 149<br/><br/>4 Diffusion 150<br/><br/>4.1 The Nature of Diffusion 151<br/><br/>4.2 Diffusion in a Concentration Gradient 154<br/><br/>4.3 The Diffusion Equation 171<br/><br/>4.4 Impurity Behavior: Silicon 183<br/><br/>4.5 Impurity Behavior: Gallium Arsenide 197<br/><br/>4.6 Diffusion Systems 202<br/><br/>4.7 Diffusion Systems for Silicon 209<br/><br/>4.8 Special Problems in Silicon Diffusion 217<br/><br/>4.9 Diffusion Systems for Gallium Arsenide 224<br/><br/>4.10 Evaluation Techniques for Diffused Layers 235<br/><br/>Tables 246<br/><br/>References 251<br/><br/>Problems 256<br/><br/>5 Epitaxy 258<br/><br/>5.1 General Considerations 261<br/><br/>5.2 Molecular Beam Epitaxy 273<br/><br/>5.3 Vapor-Phase Epitaxy 283<br/><br/>5.4 VPE Processes for Silicon 296<br/><br/>5.5 VPE Processes for Gallium Arsenide 313<br/><br/>5.6 Liquid-Phase Epitaxy 330<br/><br/>5.7 LPE Systems 340<br/><br/>5.8 Heteroepitaxy 345<br/><br/>5.9 Evaluation of Epitaxial Layers 348<br/><br/>Tables 356<br/><br/>References 358<br/><br/>Problems 366<br/><br/>6 Ion Implantation 368<br/><br/>6.1 Penetration Range 370<br/><br/>6.2 Implantation Damage 389<br/><br/>6.3 Annealing 393<br/><br/>6.4 Ion Implantation Systems 407<br/><br/>6.5 Process Considerations 416<br/><br/>6.6 High-Energy Implants 430<br/><br/>6.7 High-Current Implants 431<br/><br/>6.8 Application to Silicon 432<br/><br/>6.9 Application to Gallium Arsenide 437<br/><br/>Tables 442<br/><br/>References 443<br/><br/>Problems 449<br/><br/>7 Native Films 451<br/><br/>7.1 Thermal Oxidation of Silicon 452<br/><br/>7.2 Thermal Nitridation of Silicon 483<br/><br/>7.3 Thermal Oxidation of Gallium Arsenide 485<br/><br/>7.4 Anodic Oxidation 487<br/><br/>7.5 Plasma Processes 495<br/><br/>7.6 Evaluation of Native Films 498<br/><br/>Tables 500<br/><br/>References 503<br/><br/>Problems 508<br/><br/>8 Deposited Films 510<br/><br/>8.1 Film Deposition Methods 511<br/><br/>8.2 Film Characteristics 522<br/><br/>8.3 Films for Protection and Masking 527<br/><br/>8.4 Films for Doping 546<br/><br/>8.5 Films for Interconnections 548<br/><br/>8.6 Films for Ohmic Contacts 556<br/><br/>8.7 Films for Schottky Diodes 570<br/><br/>Tables 576<br/><br/>References 578<br/><br/>9 Etching and Cleaning 587<br/><br/>9.1 Wet Chemical Etching 589<br/><br/>9.2 Dry Physical Etching 613<br/><br/>9.3 Dry Chemical Etching 620<br/><br/>9.4 Reactive Ion Etching 625<br/><br/>9.5 Chemically Assisted Ion Beam Techniques 636<br/><br/>9.6 Etching-Induced Damage 638<br/><br/>9.7 Cleaning 639<br/><br/>Tables 646<br/><br/>References 654<br/><br/>Problems 661<br/><br/>10 Lithographic Processes 662<br/><br/>10.1 Photoreactive Materials 664<br/><br/>10.2 Pattern Generation and Mask-Making 669<br/><br/>10.3 Pattern Transfer 674<br/><br/>10.4 Advanced Techniques 685<br/><br/>10.5 Problem Areas 696<br/><br/>11 Device and Circuit Fabrication 704<br/><br/>11.1 Isolation 705<br/><br/>11.2 Self-Alignment 712<br/><br/>11.3 Local Oxidation 714<br/><br/>11.4 Planarization 721<br/><br/>11.5 Metallization 726<br/><br/>11.6 Gettering 728<br/><br/>11.7 Mos-Based Silicon Microcircuits 730<br/><br/>11.8 BJT-Based Silicon Microcircuits 749<br/><br/>11.9 Gallium Arsenide Microcircuits 778<br/><br/>Tables 790<br/><br/>References 790<br/><br/>Appendix The Mathematics of Diffusion 801<br/><br/>A.1 Solutions for a Constant Diffusion Coefficient 802<br/><br/>A.2 Solution for a Time-Dependent Diffusion Coefficient 811<br/><br/>A.3 Solution for Concentration-Dependent Diffusion Coefficients 813<br/><br/>A.4 Determination of the Diffusion Constant 815<br/><br/>References 817<br/><br/>Index 819 |
| 700 ## - ADDED ENTRY--PERSONAL NAME | |
| Personal name | Ghandhi, Sorab K |
| 856 ## - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | <a href="https://books.google.co.in/books?id=G-NPOd_BXZkC&printsec=frontcover&dq=vlsi+fabrication+principles+by+gandhi&hl=en&sa=X&ved=0ahUKEwik1ODH0a7hAhVvU98KHVCoAjsQ6AEIMDAB#v=onepage&q=vlsi%20fabrication%20principles%20by%20gandhi&f=false">https://books.google.co.in/books?id=G-NPOd_BXZkC&printsec=frontcover&dq=vlsi+fabrication+principles+by+gandhi&hl=en&sa=X&ved=0ahUKEwik1ODH0a7hAhVvU98KHVCoAjsQ6AEIMDAB#v=onepage&q=vlsi%20fabrication%20principles%20by%20gandhi&f=false</a> |
| 901 ## - LOCAL DATA ELEMENT A, LDA (RLIN) | |
| Acc. No. | 22141 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Source of classification or shelving scheme | Dewey Decimal Classification |
| Koha item type | Books |
| Withdrawn status | Lost status | Source of classification or shelving scheme | Damaged status | Not for loan | Collection code | Home library | Current library | Shelving location | Date acquired | Source of acquisition | Cost, normal purchase price | Inventory number | Total Checkouts | Full call number | Barcode | Date last seen | Date last borrowed | Price effective from | Koha item type |
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| Dewey Decimal Classification | Not For Loan | Reference | Amity Central Library | Amity Central Library | ASET ECE | 29/04/2015 | UBSPD | 689.00 | DEL / 460308 | 1 | 621.395 GHA-V | 22141 | 01/09/2015 | 01/09/2015 | 29/04/2015 | Reference Book | |||
| Dewey Decimal Classification | Amity Central Library | Amity Central Library | ASET ECE | 29/04/2015 | UBSPD | 689.00 | DEL / 460308 | 2 | 621.395 GHA-V | 22142 | 02/11/2015 | 26/10/2015 | 29/04/2015 | Books |